MJE18004D2G ON Semiconductor, MJE18004D2G Datasheet - Page 8

• Manufacturer Part Number: MJE18004D2G
• Description: TRANS PWR NPN 5A 450V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MJE18004D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

COMMON
Figure 25. Dynamic Saturation Voltage Measurements
+15 V
+10 V
-V
off
0 V
1 mF
I
B
MPF930
50 W
V
CE
1 ms
90% I
dyn 1 ms
B
500 mF
3 ms
150
3 W
W
MPF930
dyn 3 ms
3 W
TIME
100
W
V
I
0
F
F
3 W
150
TYPICAL SWITCHING CHARACTERISTICS
W
Table 1. Inductive Load Switching Drive Circuit
0
MTP8P10
MJE210
MUR105
10% I
0.1 V
2
F
F
Figure 27. t
MTP12N10
MTP8P10
http://onsemi.com
t
fr
V
FRM
4
R
R
B1
B2
fr
A
8
V
1 mF
Measurements
FR
I
out
100 mF
10
(1.1 V
9
8
7
6
5
4
3
2
1
0
6
0
F
unless otherwise specified)
Figure 26. Inductive Switching Measurements
V
V
L = 10 mH
RB2 = ∞
V
I
C(pk)
clamp
(BR)CEO(sus)
CC
I
I
C
B
1
V
= 20 V
F
= 100 mA
V
8
CE
I
B
90% I
2
10% V
I
B
1
B1
10
3
clamp
t
Inductive Switching
L = 200 mH
RB2 = 0
V
RB1 selected for
desired Ib1
V
si
CC
CE
I
B
4
= 15 V
TIME
PEAK
2
5
t
c
90% I
t
6
fi
I
C
PEAK
C
RBSOA
L = 500 mH
RB2 = 0
V
RB1 selected
for desired Ib1
CC
7
10% I
= 15 V
C
8