MJE18004D2G ON Semiconductor, MJE18004D2G Datasheet - Page 5

• Manufacturer Part Number: MJE18004D2G
• Description: TRANS PWR NPN 5A 450V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MJE18004D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.1
0.1
100
10
10
10
1
1
0.001
0.001
1
Figure 7. Base−Emitter Saturation Region
Figure 9. Base−Emitter Saturation Region
I
I
C
C
/I
/I
T
B
B
J
T
= 5
= - 20°C
= 20
J
= - 20°C
0.01
I
I
0.01
C
C
V
Figure 11. Capacitance
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
R
T
, REVERSE VOLTAGE (VOLTS)
J
= 125°C
T
J
= 125°C
C
ib
(pF)
0.1
0.1
10
T
J
T
= 25°C
TYPICAL STATIC CHARACTERISTICS
J
= 25°C
T
f
(test)
C
J
1
1
ob
= 25°C
= 1 MHz
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100
10
10
5
0.1
10
1200
1000
0.1
10
1
800
600
1
0.001
0.01
10
BVCER(sus) @
ICER = 200
mA,
Lc = 25 mH
Figure 8. Base−Emitter Saturation Region
REVERSE EMITTER-COLLECTOR CURRENT (AMPS)
I
C
Figure 10. Forward Diode Voltage
/I
B
T
= 10
J
= - 20°C
Figure 12. BVCER = f(R
0.01
I
C
BASE-EMITTER RESISTOR (W)
, COLLECTOR CURRENT (AMPS)
0.1
BVCER @ ICER = 10 mA
T
J
= 125°C
125°C
0.1
100
T
J
= 25°C
1
25°C
BE
1
)
T
C
= 25°C
1000
10
10