MJE18004D2G ON Semiconductor, MJE18004D2G Datasheet

TRANS PWR NPN 5A 450V TO-220AB

MJE18004D2G

Manufacturer Part Number
MJE18004D2G
Description
TRANS PWR NPN 5A 450V TO-220AB
Manufacturer
ON Semiconductor
Datasheet
1.MJE18004D2.pdf (10 pages)

Specifications of MJE18004D2G

Transistor Type
NPN
Current - Collector (ic) (max)
5A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
750mV @ 400mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
6 @ 2A, 1V
Power - Max
75W
Frequency - Transition
13MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MJE18004D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
transistor (H2BIP). High dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an
h
Features
•
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 6
FE
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current
Base Current − Continuous
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
The MJE18004D2 is state−of−art High Speed High gain BIPolar
It’s characteristics make it also suitable for PFC application.
H2BIP Structure which Minimizes the Spread
Spreads
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I
Extremely Low Storage Time Min/Max Guarantees Due to the
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
“6 Sigma” Process Providing Tight and Reproductible Parameter
These Devices are Pb−Free and are RoHS Compliant*
window.
− Peak (Note 1)
− Peak (Note 1)
Rating
(T
J
= 25°C unless otherwise noted)
C
= 25_C
Symbol
T
V
V
V
V
R
R
J
I
I
P
CEO
CBO
EBO
, T
T
CES
CM
BM
I
I
qJC
qJA
C
B
D
L
stg
C
= 100 mA
– 65 to 150
CE(sat)
Value
1000
1000
1.65
62.5
450
260
0.6
12
10
75
5
2
4
1
_C/W
_C/W
W/°C
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
°C
W
*For additional information on our Pb−Free strategy
MJE18004D2G
1
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2
Device
3
POWER TRANSISTORS
1000 VOLTS, 75 WATTS
18004D2 = Device Code
G
A
Y
WW
ORDERING INFORMATION
http://onsemi.com
4
5 AMPERES,
CASE 221A
TO−220AB
STYLE 1
TO−220AB
(Pb−Free)
= Pb−Free Package
= Assembly Location
= Year
= Work Week
Package
Publication Order Number:
50 Units / Rail
MJE18004D2/D
MARKING
DIAGRAM
Shipping
18004D2G
AYWW
†

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MJE18004D2G Summary of contents

Page 1

... I 2 Adc 0.6 W/° – 150 °C J stg MJE18004D2G R 1.65 _C/W qJC R 62.5 _C/W qJA T 260 _C L *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 http://onsemi.com POWER TRANSISTORS ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 3

ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Characteristic Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...

Page 4

TYPICAL STATIC CHARACTERISTICS 100 20° 25° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt ...

Page 5

20° 125°C J 0.1 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 7. Base−Emitter Saturation Region ...

Page 6

TYPICAL SWITCHING CHARACTERISTICS 3200 125°C Bon Boff 300 25° 2400 1600 800 ...

Page 7

TYPICAL SWITCHING CHARACTERISTICS 1600 Boff Bon 300 V Z 1200 = 200 800 400 COLLECTOR ...

Page 8

TYPICAL SWITCHING CHARACTERISTICS V CE dyn 1 ms dyn 90 TIME Figure 25. Dynamic Saturation Voltage Measurements + 100 ...

Page 9

DC 1 0.1 0.01 10 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 28. Forward Bias Safe Operating Area 1.0 0.8 0.6 0.4 THERMAL 0.2 DERATING 100 T , ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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