MJE18004D2G ON Semiconductor, MJE18004D2G Datasheet - Page 6

• Manufacturer Part Number: MJE18004D2G
• Description: TRANS PWR NPN 5A 450V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MJE18004D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3200
2400
1600
1000
800
800
600
400
200
0
4
3
2
1
0
0
1
0
0
I
V
V
L
Bon
C
CC
Z
Figure 17. Inductive Switching Time,
= 300 V
= 200 mH
= I
= 15 V
Figure 13. Resistive Switch Time, t
Figure 15. Inductive Storage Time,
Boff
T
T
T
T
T
T
J
J
J
J
J
J
I
I
I
I
= 125°C
= 25°C
C
C
C
C
= 125°C
= 25°C
= 125°C
= 25°C
1
1
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
/I
t
B
c
= 10
and t
2
t
si
@ I
fi
I
I
V
PW = 20 ms
C
Bon
@ I
CC
/I
C
B
2
2
= I
= 300 V
/I
= 5
C
B
Boff
/I
TYPICAL SWITCHING CHARACTERISTICS
B
= 5
= 5
3
I
3
3
C
I
V
V
L
Bon
/I
C
CC
Z
B
= 300 V
= 200 mH
= 5
I
= I
= 15 V
C
/I
on
Boff
B
= 5
http://onsemi.com
t
t
c
fi
4
4
4
6
1000
800
600
400
200
5
4
3
2
1
0
4
3
2
1
0
0
1
0
0
I
V
V
L
Boff
C
CC
Z
= 300 V
= 200 mH
= I
Figure 14. Resistive Switch Time, t
= 15 V
Figure 18. Inductive Switching Time,
Figure 16. Inductive Storage Time,
Bon
T
T
T
T
T
T
J
J
J
J
J
J
I
I
= 125°C
= 25°C
I
C
C
C
= 125°C
= 25°C
1
= 125°C
= 25°C
1
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
2
t
t
si
I
fi
C
/I
@ I
@ I
B
= 10
I
C
C
C
/I
I
B
2
2
C
/I
/I
/I
= 10
B
B
B
= 10
= 5
= 10
3
I
3
3
C
I
V
V
L
Bon
/I
C
CC
Z
B
I
V
PW = 20 ms
Bon
= 300 V
= 200 mH
CC
= 10
= I
= 15 V
off
= I
Boff
= 300 V
Boff
4
4
4