MJE18004D2G ON Semiconductor, MJE18004D2G Datasheet - Page 7

• Manufacturer Part Number: MJE18004D2G
• Description: TRANS PWR NPN 5A 450V TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MJE18004D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1600
1200
1000
800
400
Figure 19. Inductive Switching, t
800
600
400
200
4
3
2
1
0
0
0.5
0
2
I
V
V
L
I
V
V
L
Boff
I
Boff
C
CC
Z
C
B
CC
Z
= 300 V
= 200 mH
I
= 100 mA
= 300 V
= 200 mH
B
= I
= 15 V
= I
= 15 V
4
Figure 23. Inductive Storage Time, t
= 50 mA
I
B
Bon
Bon
1
= 200 mA
Figure 21. Inductive Fall Time
6
I
I
B
I
C
C
1
, COLLECTOR CURRENT (AMPS)
= 500 mA I
, COLLECTOR CURRENT (AMPS)
1.5
I
8
C
/I
h
B
FE
= 10
, FORCED GAIN
T
T
2
J
J
10
B
= 125°C
= 25°C
= 1 A
2
12
2.5
TYPICAL SWITCHING CHARACTERISTICS
c
@ I
14
I
C
= 2 A
C
3
/I
T
T
3
16
J
J
B
I
V
V
L
Bon
C
CC
Z
= 125°C
= 25°C
= 10
= 300 V
= 200 mH
= I
= 15 V
3.5
I
C
Boff
si
18
= 1 A
http://onsemi.com
20
4
4
7
2000
1500
1000
420
380
340
300
500
5
4
3
2
0
0
0
2
I
V
V
L
Bon
I
V
V
L
C
Bon
CC
Z
I
C
C
CC
Z
Figure 24. Forward Recovery Time, T
= 300 V
= 200 mH
= 200 mH
= 2 A
= 300 V
= I
Figure 22. Inductive Crossover Time
= 15 V
= I
= 15 V
Figure 20. Inductive Storage Time
Boff
Boff
0.5
5
I
F
, FORWARD CURRENT (AMP)
8
h
h
I
FE
FE
C
= 1 A
, FORCED GAIN
, FORCED GAIN
10
1
T
T
J
J
= 125°C
= 25°C
14
dI/dt = 10 A/ms
T
C
15
1.5
= 25°C
T
T
J
J
I
C
= 125°C
= 25°C
I
C
= 1 A
= 2 A
FR
20
20
2