MMBT2369A Fairchild Semiconductor, MMBT2369A Datasheet - Page 6

no-image

MMBT2369A

Manufacturer Part Number
MMBT2369A
Description
TRANSISTOR NPN SW 15V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT2369A

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
40V
Emitter-base Voltage
4.5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
40
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT2369ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT2369A
Manufacturer:
FAIRC
Quantity:
50
Part Number:
MMBT2369A
Manufacturer:
FAIRCHILD
Quantity:
3 449
Part Number:
MMBT2369A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
MMBT2369ALT1
Manufacturer:
TOSHIBA
Quantity:
3 973
Part Number:
MMBT2369ALT1G
Manufacturer:
ON
Quantity:
360 000
Part Number:
MMBT2369ALT1G
Manufacturer:
ON
Quantity:
6 000
Part Number:
MMBT2369ALT1G
Manufacturer:
ONSEMI
Quantity:
20 000
Company:
Part Number:
MMBT2369ALT1G
Quantity:
1 000
Test Circuits
0
V
- 10
Pulse generator
V
Source Impedance = 50
PW
Duty Cycle
IN
Pulse generator
V
Source Impedance = 50
PW
Duty Cycle
0
IN
IN
Rise Time
Rise Time
300 ns
300 ns
t
on
2%
2%
1 ns
1 ns
V
IN
t
V
V
on
BB
IN
= + 15.25 V
= - 3.0 V
V
FIGURE 1: Charge Storage Time Measurement Circuit
OUT
10%
90%
V
IN
56
V
IN
FIGURE 2: t
0.0023 F
0.1 F
11 V
50
0.0023 F
3.3 K
'A'
+
500
500
V
BB
10 F
ON
3.3 K
0.05
0.1
, t
OFF
F
F
Measurement Circuit
10 F
890
0.05
0.1
220
F
F
10 V
+
0.0023 F
0.1 F
91
V
50
0.0023 F
CC
= 3.0 V
1 K
NPN Switching Transistor
V
OUT
V
OUT
0
+6V
- 4V
V
0
IN
V
OUT
To sampling oscilloscope input
impedance = 50
Rise Time 1 ns
t
t
s
off
10% Pulse waveform
at point ' A'
(continued)
10%
t
V
V
off
BB
IN
= - 20.9 V
= 12 V
10%
90%
V
OUT

Related parts for MMBT2369A