MMBT2369A Fairchild Semiconductor, MMBT2369A Datasheet - Page 4

• Manufacturer Part Number: MMBT2369A
• Description: TRANSISTOR NPN SW 15V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2369A

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 4.5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 40
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2369ATR

Typical Characteristics
12
10
-12
-10
5
4
3
2
1
0
8
6
4
2
0
0.1
-8
-6
-4
-2
25
0
0
I = 10 mA, I
C
C
C
obo
V
ibo
I = 10 mA
and Turn Off Base Currents
CC
C
Output Capacitance vs
Storage Time vs Turn On
Reverse Bias Voltage
= 3.0 V
T
I
Ambient Temperature
B1
REVERSE BIAS VOLTAGE (V)
Switching Times vs
A
2
0.5
- TURN ON BASE CURRENT (mA)
- AMBIENT TE MPERATURE ( C)
B1
t = 3.0 ns
s
50
= 3.0 mA, I
1
4
t
t
t
B2
t
t
t
t
t
t
t
t
t
s
s
s
s
s
s
s
s
s
d
f
r
6.0 ns
= 1.5 mA, V
5
6
75
4.0 ns
10
F = 1.0MHz
(continued)
°
CC
8
= 3.0 V
50
100
10
100
-30
-25
-20
-15
-10
-12
-10
50
20
10
-5
-8
-6
-4
-2
0
0
5
2
1
0
0
t = 3.0 ns
V
I = 100 mA
V
S
I = 10 mA
C
CC
and Turn Off Base Currents
and Turn Off Base Currents
C
CC
Storage Time vs Turn On
Storage Time vs Turn On
2
= 3.0 V
= 3.0 V
I
I
5
B1
B1
I
Switching Times vs
2
NPN Switching Transistor
C
- TURN ON BASE CURRENT (mA)
- TURN ON BASE CURRENT (mA)
Collector Current
- COLLECTOR CURRENT (mA)
t = 3.0 ns
5
s
10
10
4
4.0 ns
15
20
6.0 ns
I
6.0 ns
C
V
6
= 10 I
CC
t
t
t
s
s
4.0 ns
20
d
50
= 3.0 V
B1
= I
16.0 ns
100
8
25
B2
(continued)
8.0 ns
t
t
t
= 10
s
s
r
t
t
t
t
t
t
s
s
s
s
s
f
300
10
30