MMBT2369A Fairchild Semiconductor, MMBT2369A Datasheet - Page 2

• Manufacturer Part Number: MMBT2369A
• Description: TRANSISTOR NPN SW 15V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2369A

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 4.5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 40
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2369ATR

h
V
V
OFF CHARACTERISTICS
V
V
V
V
I
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
C
C
h
SMALL SIGNAL CHARACTERISTICS
t
t
t
Symbol
CBO
FE
s
on
off
CE(
BE(
fe
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
obo
ibo
Electrical Characteristics
*
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
sat
sat
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
)
)
DC Current Gain*
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Storage Time
Turn-On Time
Turn-Off Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
C
C
C
C
C
C
C
C
C
C
C
C
V
V
I
R
I
V
V
C
C
C
E
C
B1
I
I
B1
B1
CB
CB
CB
EB
G
CC
CC
= 10 mA, V
= 100 mA, V
= 10 mA, I
= 30 mA, I
= 100 mA, I
= 10 mA, I
= 30 mA, I
= 100 mA, I
= 10 mA,V
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 A, I
= 10 mA, I
= 10 A, V
= 10 A, I
= 10 mA, V
= I
= 2.0 k , f = 100 MHz
= 3.0 mA
= 3.0 mA, I
= 20 V, I
= 20 V, I
= 5.0 V, I
= 0.5 V, I
= 3.0 V, I
= 3.0 V, I
B2
Test Conditions
= I
C
C
E
B
B
B
B
= 10 mA
B
E
E
B
B
B
BE
CE
E
C
CE
C
C
CE
= 0
= 0
B
B
= 0
= 1.0 mA
= 3.0 mA
= 1.0 mA
= 3.0 mA
= 0
= 0, T
CE
= 1.0 mA,T
= 1.0 mA,T
= 1.0 mA,T
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
B2
= 10 mA,
= 10 mA,
= 0
= 10 mA
= 10 mA
= 0.35 V,T
= 10 V,
= 1.0 V
= 1.5 mA
= 1.0 V
A
= 125 C
NPN Switching Transistor
A
A
A
A
= 125 C
=125 C
= -55 C
=-55 C
Min
0.59
4.5
5.0
15
40
40
0.7
40
20
20
Max
0.25
0.85
1.02
1.15
0.4
120
4.0
5.0
30
0.2
0.3
0.5
1.6
13
12
18
(continued)
Units
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A