BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 30

RF Amplifier RF SILICON MMIC

BGA 735N16 E6327

Manufacturer Part Number
BGA 735N16 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
High Linearity Tri-Bandr
Datasheet

Specifications of BGA 735N16 E6327

Noise Figure
1.1 dB
Operating Supply Voltage
2.8 V
Supply Current
4 mA
Maximum Operating Temperature
+ 85 C
Package / Case
TSNP-16-1
Minimum Operating Temperature
- 30 C
Other names
BGA735N16E6327XT
BGA735N16
High Linearity Tri-Band LTE/UMTS LNA
Application Circuit and Block Diagram
Figure 8
Detail of Application Board Layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
30
Revision 3.8, 2010-12-23

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