BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 29

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

3.6
Figure 6
Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.660 mm, 17 µm Cu metallization, gold plated. Board
Figure 7
Data Sheet
size: 21mm x 50 mm.
Application Board
Application Board Layout on 3-layer FR4
Cross-Section View of Application Board
29
High Linearity Tri-Band LTE/UMTS LNA
Application Circuit and Block Diagram
Revision 3.8, 2010-12-23
BGA735N16