BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 26

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

3.3
Figure 4
Note: Package paddle (Pin 0) has to be RF grounded.
Table 21
Part Number
L1 ... L5
C1 ... C8
R
Data Sheet
REF
UMTS Bands 2, 12, 13, 14, 17 and 40 Application Circuit Schematic
Application Circuit with Chip Outline (Top View)
Bill of Materials
Band 40
RFIN
Band 2
RFIN
Bands 12 / 13 / 14 / 17
Part Type
Chip inductor
Chip capacitor
Chip resistor
56 pF
C3
10 pF
C1
22pF
C2
2.7nH
L 2
RFIN
3.3nH
L 1
10pF
L1
L1
C4
3pF
100pF
C5
RFINM
RFINH
C6
RFGNDM
0
5
6
7
8
9
n /c
n/c
GND
11nH
L3
L1
Manufacturer
Various
Various
Various
10
4
RFINL
RFGNDH
10nF
C8
V
EN
V
= 0 / 2.8V
CC
BGA735N16_Appl_Bands_2_12_13_14_17_40_BlD.vsd
11
26
3
= 2.8V
Biasing & Logic
VEN2
VCC
Circuitry
V
High Linearity Tri-Band LTE/UMTS LNA
V
GS
EN
= 0 / 2.8V
12
= 0 / 2 .8V
2
VEN1
VGS
Size
0402
0402
0402
RFOUTM
RFOUTH
RREF
RFOUTL
n /c
Application Circuit and Block Diagram
16
15
14
13
1
8 .2pF
3.6nH
C7
L 4
R
27 kΩ
REF
7.5nH
L5
RFOUT
Band 2
RFOUT
Bands 12 / 13 / 14 / 17
RFOUT
Band 40
Revision 3.8, 2010-12-23
Comment
Wirewound, Q ≈ 50
BGA735N16