BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 21

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

2.17
Table 16
Parameter
Pass band range band 40
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Stability factor
Input compression point
Inband IIP3
1) Performance based on application circuit in Figure 4 on Page 26
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
f
Data Sheet
1
-
f
2
= 1 MHz
2)
Measured RF Characteristics UMTS Band 40
Typical Characteristics 2300 MHz Band,
3)
2)
2)
2)
2)
Symbol
I
I
S
S
S
S
NF
NF
S
S
S
S
k
IP
IP
IIP3
IIP3
CCHG
CCLG
21HG
21LG
12HG
12LG
11HG
11LG
22HG
22LG
1dBHG
1dBLG
HG
LG
HG
LG
Min.
2300
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
21
–
Typ.
4.0
0.65
17.1
7.0
-33
-7.0
1.1
7.0
-20
-18
-20
-11
>2.0
-10
-4
-2
6
T
Values
A
= 25 °C,
High Linearity Tri-Band LTE/UMTS LNA
Max.
2400
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
CC
= 2.8 V
Unit
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
1)
Electrical Characteristics
Note / Test Condition
–
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
High gain mode
Low gain mode
50 Ω, high gain mode
50 Ω, low gain mode
50 Ω, high gain mode
50 Ω, low gain mode
DC to 8 GHz; all gain
modes
High gain mode
Low gain mode
High gain mode
Low gain mode
Revision 3.8, 2010-12-23
BGA735N16