BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 12

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

2.7
Current consumption of logic inputs VEN1, VEN2, VGS
Logic currents
V
2.8
Table 7
Parameter
Gainstep settling time
Bandselect settling time
Data Sheet
CC
= 2.8 V
12
10
8
6
4
2
0
0
Logic Signal Characteristics;
Switching Times
Typical Switching Times;
I
0.5
EN1,2
= f(
1
V
V
EN1,2
EN1,2
1.5
Symbol
t
t
GS
BS
)
[V]
2
T
2.5
Min.
–
–
A
= -30 ... 85 °C
3
T
Typ.
1
1
Values
A
Logic currents
V
= 25 °C
12
CC
= 2.8 V
High Linearity Tri-Band LTE/UMTS LNA
Max.
–
–
6
4
2
0
0
I
GS
Unit
µs
µs
0.5
= f(
V
GS
1
Note / Test Condition
Switching LG ↔ HG all bands
Switching from any band to a
different band (pins VEN1,2)
)
V
GS
1.5
Electrical Characteristics
[V]
Revision 3.8, 2010-12-23
2
BGA735N16
2.5
3