BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 24

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

3
3.1
Figure 2
Note: Package paddle (Pin 0) has to be RF grounded.
Table 19
Part Number
L1 ... L3
C1 ... C7
R
Data Sheet
REF
Application Circuit and Block Diagram
UMTS Bands 1, 2, 4, 5, 6 and 10 Application Circuit Schematic
Application Circuit with Chip Outline (Top View)
Bill of Materials
Bands 1 / 4 / 10
Band 2
RFIN
RFIN
Part Type
Chip inductor
Chip capacitor
Chip resistor
10 pF
10 pF
C1
C3
Bands 5 / 6
RFIN
3 .3nH
2 .7nH
22pF
22pF
C2
C4
L1
L2
L1
L1
3.0 pF
C5
22 pF
RFINM
RFINH
0
5
6
7
8
9
C6
RFGNDM
n/c
n/c
GND
9.1nH
Manufacturer
Various
Various
Various
L 3
L1
10
4
RFINL
RFGNDH
10nF
C7
24
V
EN
V
= 0 / 2.8V
CC
11
3
= 2 .8V
BGA735N16_Appl_Bands_1_2_4_5_6_10_BlD.vsd
High Linearity Tri-Band LTE/UMTS LNA
Biasing
VCC
VEN2
Circuitry
V
& Logic
Size
0402
0402
0402
V
GS
EN
= 0 / 2 .8V
12
= 0 / 2.8V
2
Application Circuit and Block Diagram
VEN1
VGS
RFOUTM
RFOUTH
RREF
RFOUTL
n/c
16
15
14
13
1
27 kΩ
R
Revision 3.8, 2010-12-23
REF
RFOUT
Band 2
RFOUT
Bands 1 / 4 / 10
RFOUT
Bands 5 / 6
Comment
Wirewound, Q ≈ 50
BGA735N16