BGA 735N16 E6327 Infineon Technologies, BGA 735N16 E6327 Datasheet - Page 28

• Manufacturer Part Number: BGA 735N16 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: High Linearity Tri-Bandr

Specifications of BGA 735N16 E6327

• Noise Figure: 1.1 dB
• Operating Supply Voltage: 2.8 V
• Supply Current: 4 mA
• Maximum Operating Temperature: + 85 C
• Package / Case: TSNP-16-1
• Minimum Operating Temperature: - 30 C
• Other names: BGA735N16E6327XT

3.5
Table 23
Pin No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Data Sheet
Pin Description
Pin Definition and Function
Name
GND
n/c
VGS
VCC
RFGNDH
n/c
RFINM
RFINH
RFGNDM
n/c
RFINL
VEN2
VEN1
RREF
RFOUTL
RFOUTH
RFOUTM
Pin
Type
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Buffer
Type
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Function
Ground connection for low band LNA and control circuitry
(package paddle)
Not connected
Gain step control
Supply voltage
High band LNA emitter ground
Not connected
Mid band LNA input
High band LNA input
Mid band LNA emitter ground
Not connected
Low band LNA input
Band select control
Band select control
Bias current reference resistor (high gain mode)
Low band output
High band LNA output
Mid band LNA output
28
High Linearity Tri-Band LTE/UMTS LNA
Application Circuit and Block Diagram
Revision 3.8, 2010-12-23
BGA735N16