MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 70

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 50:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
COMMAND
BA[1:0]
ADDR
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK 0
T0
ROW
ROW
Alternating Bank Write Accesses
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t
t
RC - bank 0
RRD
t CK
Notes: 1. For this example, BL = 4.
T1
NOP
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
t DS
BANK 0
T2
WRITE
D
IN
t CMH
t DH
t CH
m
t DS
D
T3
IN
NOP
m + 1
t DH
t DS
D
BANK 1
ACTIVE
T4
IN
ROW
ROW
m + 2
t DH
70
t RCD - bank 1
t DS
D
T5
IN
NOP
m + 3
t DH
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t WR - bank 0
ENABLE AUTO PRECHARGE
COLUMN b
t DS
BANK 1
WRITE
T6
D
256Mb: x16, x32 Mobile SDRAM
IN
t DH
b
2
t DS
D
T7
NOP
IN
b + 1
t DH
t RP - bank 0
©2006 Micron Technology, Inc. All rights reserved.
t DS
D
Timing Diagrams
T8
NOP
IN
b + 2
t DH
t DS
D
BANK 0
T9
IN
ACTIVE
ROW
ROW
m + 3
t RCD - bank 0
t WR - bank 1
t DH
DON’T CARE