MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 62

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 42:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
COMMAND
BA[1:0]
ADDR
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Single READ – with Auto Precharge
T0
BANK
ROW
ROW
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes: 1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRECHARGE.
t CK
T1
NOP
2. PRECHARGE command not allowed or
See Table 11 on page 46.
t CL
T2
NOP 2
t CH
T3
NOP 2
ENABLE AUTO PRECHARGE
t CMS
COLUMN m
62
BANK
T4
READ
t CMH
CL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RAS would be violated.
T5
NOP
t AC
256Mb: x16, x32 Mobile SDRAM
t RP
T6
NOP
D
t OH
OUT
t HZ
m
©2006 Micron Technology, Inc. All rights reserved.
BANK
ACTIVE
ROW
ROW
T7
Timing Diagrams
T8
NOP
DON’T CARE
UNDEFINED