MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 22

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Deep Power-Down
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. The user must not issue another command to the same bank until the precharge
time (
issued at the earliest possible time, as described for each burst type in “Operations” on
page 23.
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power to the memory array. Data will not be retained once the device
enters deep power-down mode.
t
RP) is completed. This is determined as if an explicit PRECHARGE command was
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile SDRAM
©2006 Micron Technology, Inc. All rights reserved.
Commands