MT48H8M32LFB5-75 IT:H Micron Technology Inc, MT48H8M32LFB5-75 IT:H Datasheet - Page 66

• Manufacturer Part Number: MT48H8M32LFB5-75 IT:H
• Description: DRAM Chip Mobile SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 133 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 8|6 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 8/6ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 46:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
COMMAND
BA[1:0]
ADDR
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
BANK
ROW
ROW
WRITE – Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Notes: 1. For this example, BL = 4, and the WRITE burst is followed by a manual PRECHARGE.
T1
NOP
DISABLE AUTO PRECHARGE
2. 15ns is required between <D
t CMS
t CL
quency.
t DS
COLUMN m
WRITE
T2
BANK
D
IN
t CMH
t CH
m
t DH
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
66
IN
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
256Mb: x16, x32 Mobile SDRAM
T6
NOP
2
SINGLE BANK
PRECHARGE
ALL BANKS
BANK
T7
©2006 Micron Technology, Inc. All rights reserved.
t RP
Timing Diagrams
NOP
T8
ACTIVE
ROW
BANK
ROW
T9
DON’T CARE