PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 9

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
APPLICATION INFORMATION
SPICE parameters for the PRF957 die
1999 Jul 23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
SEQUENCE No.
UHF wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
PARAMETER
0.963
102.3
1.002
64.75
841.1
35.77
2.138
90.16
1.000
3.198
25.77
156.6
1.047
6.071
0.000
2.478
0.164
1.315
0.000
1.110
3.000
1.161
600.0
0.394
3.073
10.25
4.599
53.49
0.000
409.9
287.1
0.111
0.104
0.000
0.000
700.0
0.000
VALUE
fA
V
mA
fA
V
mA
aA
eV
pF
mV
ps
V
mA
deg
fF
mV
ps
F
mV
A
UNIT
9
Notes
1. These parameters have not been extracted, the
2. C
List of components (see Fig.14)
38
39
40
C
C
C
L1
L2
L3
L
L
handbook, halfpage
SEQUENCE No.
B
E
be
cb
ce
(2)
(2)
QL
QL
QL
f
c
default values are shown.
capacitance to collector.
= corner frequency = 1 GHz.
DESIGNATION
bpb
B
B
B
E
(f) = QL
(f) = QL
= 50; QL
Fig.14 Package equivalent circuit SOT323.
, C
C be
bpe
L1
B
E
E
(f/f
(f/f
: base-bondpad and emitter-bondpad
= 50;
c
c
);
);
L B
FC
C
C
PARAMETER
bpb
bpe
B'
2
100
100
0.34
0.10
0.34
0.60
0.60
C cb
E'
E
VALUE
L3
L E
C'
Product specification
0.888
73.00
131.00
VALUE
fF
fF
fF
nH
nH
nH
nH
nH
PRF957
C
MBC964
L2
ce
UNIT
fF
fF
UNIT
C