PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 4

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
1999 Jul 23
DC characteristics
V
V
V
I
I
h
AC characteristics
C
f
G
NF
SYMBOL
s
j
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C unless otherwise specified.
re
21
UHF wideband transistor
UM
2
UM
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
noise figure
PARAMETER
I
I
I
V
V
I
I
I
I
I
I
T
I
T
f = 1 GHz
f = 2 GHz
C
C
E
C
C
C
C
C
C
C
amb
amb
S
S
CB
EB
= 10 A; I
= 100 A; I
= 100 A; I
= 5 mA; V
= 15 mA; V
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
=
=
= 10 V; I
= 1 V; I
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
CB
; I
; I
4
12
CONDITIONS
C
C
= 6 V; f = 1 MHz
C
C
is zero.
CE
= 5 mA; V
= 5 mA; V
E
= 0
E
B
CE
CE
CE
CE
CE
= 0
= 0
= 0
= 0
= 6 V
= 6 V
= 6 V; f
= 6 V; f = 1 GHz
= 6 V;
= 6 V;
G
CE
CE
UM
m
= 6 V;
= 6 V;
= 1 GHz
=
10
log
-------------------------------------------------------- dB
20
10
1.5
50
1
MIN.
–
s
11
100
100
0.4
8.5
14
15
9.2
1.3
1.8
s
2
TYP.
21
1
Product specification
2
–
s
22
100
100
200
MAX.
PRF957
2
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
dB
UNIT