PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 7

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
1999 Jul 23
handbook, halfpage
UHF wideband transistor
V
(1) f = 2 GHz
(2) f = 1.5 GHz
(3) f = 1 GHz
Fig.10 Minimum noise figure as a function of
CE
(dB)
NF
= 6 V.
0
4
3
2
1
10
1
collector current; typical values.
(1)
(2)
(3)
(4)
(5)
(6)
(4) f = 900 MHz
(5) f = 800 MHz
(6) f = 500 MHz.
1
10
I C (mA)
MGS520
10
2
7
handbook, halfpage
V
(1) I
(2) I
(3) I
Fig.11 Minimum noise figure as a function of
CE
(dB)
NF
C
C
C
= 6 V.
= 30 mA
= 15 mA
= 5 mA.
4
3
2
1
0
10
2
frequency; typical values.
10
3
(1)
(2)
(3)
f (MHz)
Product specification
PRF957
MGS521
10
4