PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 6

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
1999 Jul 23
handbook, halfpage
handbook, halfpage
UHF wideband transistor
f = 1 GHz; V
Fig.6
I
Fig.8
C
gain
(dB)
= 15 mA; V
gain
(dB)
20
16
12
50
40
30
20
10
8
4
0
0
10
0
2
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
CE
CE
= 6 V.
MSG
= 6 V.
10
G UM
MSG
G UM
10
20
3
G max
G max
f (MHz)
30
I C (mA)
MGS516
MGS518
40
10
4
6
handbook, halfpage
handbook, halfpage
I
Fig.7
I
Fig.9
C
C
gain
(dB)
gain
(dB)
= 5 mA; V
= 30 mA; V
50
40
30
20
10
50
40
30
20
10
0
0
10
10
2
2
G UM
Gain as a function of frequency; typical
values.
Gain as a function of frequency; typical
values.
MSG
CE
CE
= 6 V.
= 6 V.
MSG
G UM
10
10
3
3
G max
G max
f (MHz)
f (MHz)
Product specification
PRF957
MGS517
MGS519
10
10
4
4