PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 5

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
1999 Jul 23
handbook, halfpage
handbook, halfpage
UHF wideband transistor
I
Fig.4
C
(mW)
P tot
(pF)
Fig.2 Power derating as a function of soldering
C re
= 0; f = 1 MHz.
400
300
200
100
0.8
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
50
point temperature.
4
100
8
150
V CB (V)
T s ( C)
MGS514
MGS512
200
12
5
handbook, halfpage
handbook, halfpage
V
Fig.3
V
Fig.5
(GHz)
CE
CE
h FE
f T
120
= 6 V.
= 6 V; f
80
40
10
0
8
6
4
2
0
0
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
m
= 1 GHz; T
10
10
amb
20
= 25 C.
20
30
Product specification
30
40
I C (mA)
I C (mA)
PRF957
MGS513
MGS515
40
50