PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 2

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
Note
1. T
1999 Jul 23
C
f
G
NF
P
R
SYMBOL
T
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
Communication and instrumentation systems.
tot
re
th j-s
UHF wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
PARAMETER
I
I
I
T
f = 1 GHz
T
P
C
C
C
amb
S
s
tot
= 0; V
= 30 mA; V
= 30 mA; V
= 60 C; note 1
=
= 270 mW
= 25 C; f = 1 GHz
opt
CB
; I
2
C
CONDITIONS
= 6 V; f = 1 MHz
= 5 mA; V
PINNING
handbook, halfpage
CE
CE
Marking code: W2.
= 6 V; f
= 6 V;
PIN
1
2
3
Fig.1 Simplified outline (SOT323) and symbol.
CE
m
Top view
base
emitter
collector
= 6 V;
= 1 GHz
1
3
MIN.
DESCRIPTION
2
0.4
8.5
15
1.3
MAM062
TYP.
Product specification
1
270
425
MAX.
PRF957
3
2
pF
GHz
dB
dB
mW
K/W
UNIT