PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 10

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
1999 Jul 23
handbook, full pagewidth
handbook, full pagewidth
UHF wideband transistor
V
V
CE
CE
= 6 V; I
= 6 V; I
C
C
= 30 mA; Z
= 30 mA.
Fig.16 Common emitter forward transmission coefficient (s
o
= 50 .
Fig.15 Common emitter input reflection coefficient (s
180
180
50
0
135
135
135
0.2
135
40
0.2
0.2
100 MHz
30
0.5
0.5
20
0.5
200 MHz
3 GHz
1 GHz
10
500 MHz
2 GHz
200 MHz
10
90
90
90
90
1
1
1
500 MHz
1 GHz
2 GHz
3 GHz
100 MHz
2
2
2
5
11
45
45
45
45
); typical values.
21
5
5
MGS524
); typical values.
MGS525
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
PRF957