BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 7

• Manufacturer Part Number: BFG480W,115
• Description: TRANS NPN 4.5V 21GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 80mA @ 2V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 23000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1982-2; 934055055115; BFG480W T/R

NXP Semiconductors
1998 Oct 21
handbook, full pagewidth
handbook, full pagewidth
NPN wideband transistor
I
I
C
C
= 80 mA; V
= 80 mA; V
CE
CE
= 2 V; Z
= 2 V.
Fig.10 Common emitter forward transmission coefficient (S
o
= 50 
Fig.9 Common emitter input reflection coefficient (S
180°
180°
25
0
40 MHz
−135°
−135°
135°
135°
20
0.2
0.2
3 GHz
0.2
15
0.5
0.5
10
0.5
40 MHz
5
−90°
−90°
90°
90°
7
1
1
1
3 GHz
2
2
2
5
11
−45°
); typical values.
45°
−45°
45°
21
5
5
MGR631
); typical values.
MGR630
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG480W