BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 3
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BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
1998 Oct 21
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
NPN wideband transistor
th j-s
(mW)
P tot
s
500
400
300
200
100
is the temperature at the soldering point of the emitter pins.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
40
PARAMETER
80
120
T s (°C)
PARAMETER
MGR623
160
open base
open collector
T
open emitter
s
60 C; note 1; see Fig.2
3
CONDITIONS
65
MIN.
VALUE
250
14.5
4.5
1
250
360
+150
150
Product specification
MAX.
BFG480W
UNIT
K/W
V
V
V
mA
mW
C
C
UNIT