BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 13
![TRANS NPN 4.5V 21GHZ SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
PACKAGE OUTLINE
1998 Oct 21
NPN wideband transistor
Plastic surface-mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
1.35
1.15
E
B
1.3
e
scale
EIAJ
13
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
BFG480W
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343R