BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 11
![TRANS NPN 4.5V 21GHZ SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
List of components used in test circuit (see Figs 18 and 19)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (
1998 Oct 21
COMPONENT
C1, C5
C2, C4
C3, C6
C7
L1, L4
L2
L3
L5
R1
R2, R3
TR1
NPN wideband transistor
handbook, full pagewidth
tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor, note 1
multilayer ceramic chip capacitor; note 1
stripline; note 2
stripline; note 2
stripline; note 2
Grade 4S2 Ferroxcube chip bead
metal film resistor
metal film resistor
NPN transistor
Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.
RF input
50 Ω
DESCRIPTION
V C
TR1
R1
R2
C1
C3
C2
L1
L2
11
24 pF
2 pF
15 pF
1 nF
100
50
50
220 ; 0.4 W
10 ; 0.4 W
BC817
DUT
VALUE
L3
V S
L4
18 x 0.2 mm
5 x 0.8 mm
6 x 0.8 mm
L5
R3
C6
C4
DIMENSIONS
C5
C7
RF output
MGM221
50 Ω
Product specification
CATALOGUE No.
4330 030 36300
9335 895 20215
BFG480W
r
= 6.15,