BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 6
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BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
1998 Oct 21
handbook, halfpage
NPN wideband transistor
V
CE
gain
(dB)
Fig.7
= 2 V; f = 2 GHz.
20
16
12
8
4
0
0
Gain as a function of collector current;
typical values.
40
80
G max
S 21
120
I C (mA)
MGR628
160
6
handbook, halfpage
I
C
gain
(dB)
= 80 mA; V
50
40
30
20
10
Fig.8
0
10
CE
Gain as a function of frequency;
typical values.
= 2 V.
10
2
MSG
S 21
10
3
G max
Product specification
f (MHz)
BFG480W
MGR629
10
4