BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 6

• Manufacturer Part Number: BFG480W,115
• Description: TRANS NPN 4.5V 21GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 80mA @ 2V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 23000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1982-2; 934055055115; BFG480W T/R

NXP Semiconductors
1998 Oct 21
handbook, halfpage
NPN wideband transistor
V
CE
gain
(dB)
Fig.7
= 2 V; f = 2 GHz.
20
16
12
8
4
0
0
Gain as a function of collector current;
typical values.
40
80
G max
S 21
120
I C (mA)
MGR628
160
6
handbook, halfpage
I
C
gain
(dB)
= 80 mA; V
50
40
30
20
10
Fig.8
0
10
CE
Gain as a function of frequency;
typical values.
= 2 V.
10
2
MSG
S 21
10
3
G max
Product specification
f (MHz)
BFG480W
MGR629
10
4