BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 5
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BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
1998 Oct 21
handbook, halfpage
handbook, halfpage
NPN wideband transistor
V
Fig.3
f = 2 GHz; V
CE
(GHz)
h FE
Fig.5
f T
100
= 2 V.
80
60
40
20
30
20
10
0
0
10
0
DC current gain as a function of collector
current; typical values.
CE
Transition frequency as a function of
collector current; typical values.
= 2 V; T
amb
50
= 25 C.
10
2
100
I C (mA)
I C (mA)
MGR624
MGR626
150
10
3
5
handbook, halfpage
handbook, halfpage
Fig.4
f = 900 MHz; V
I
C
C re
(fF)
gain
(dB)
Fig.6
= 0; f = 1 MHz.
800
600
400
200
30
20
10
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Gain as a function of collector current;
typical values.
CE
MSG
= 2 V.
1
40
2
S 21
80
3
Product specification
120
BFG480W
G max
4
I C (mA)
V CB (V)
MGR625
MGR627
160
5