BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 5

• Manufacturer Part Number: BFG480W,115
• Description: TRANS NPN 4.5V 21GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG480W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
• Gain: 16dB
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 80mA, 2V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 80mA @ 2V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 23000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1982-2; 934055055115; BFG480W T/R

NXP Semiconductors
1998 Oct 21
handbook, halfpage
handbook, halfpage
NPN wideband transistor
V
Fig.3
f = 2 GHz; V
CE
(GHz)
h FE
Fig.5
f T
100
= 2 V.
80
60
40
20
30
20
10
0
0
10
0
DC current gain as a function of collector
current; typical values.
CE
Transition frequency as a function of
collector current; typical values.
= 2 V; T
amb
50
= 25 C.
10
2
100
I C (mA)
I C (mA)
MGR624
MGR626
150
10
3
5
handbook, halfpage
handbook, halfpage
Fig.4
f = 900 MHz; V
I
C
C re
(fF)
gain
(dB)
Fig.6
= 0; f = 1 MHz.
800
600
400
200
30
20
10
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Gain as a function of collector current;
typical values.
CE
MSG
= 2 V.
1
40
2
S 21
80
3
Product specification
120
BFG480W
G max
4
I C (mA)
V CB (V)
MGR625
MGR627
160
5