BFG480W,115 NXP Semiconductors, BFG480W,115 Datasheet - Page 10
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BFG480W,115
Manufacturer Part Number
BFG480W,115
Description
TRANS NPN 4.5V 21GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BFG480W115.pdf
(16 pages)
Specifications of BFG480W,115
Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Gain
16dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 80mA, 2V
Current - Collector (ic) (max)
250mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
40 @ 80mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
23000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.25 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1982-2
934055055115
BFG480W T/R
934055055115
BFG480W T/R
NXP Semiconductors
1998 Oct 21
handbook, halfpage
handbook, halfpage
NPN wideband transistor
Fig.16 Input impedance as function of frequency
Pulsed, class-AB operation; < 1 ; 2; t
f = 2 GHz; V
V
CE
(dB)
Fig.14 Power gain and collector efficiency as a
G p
(Ω)
Z i
= 3.6 V; I
16
12
10
8
4
0
8
6
4
2
0
1.8
10
(series components); typical values.
CE
function of load power; typical values.
CQ
= 2.4 V; I
= 1 mA; P
1.85
14
η C
CQ
L
= 1 mA; tuned at P
= 100 mW; T
x i
r i
1.9
18
G p
p
= 5 ms.
s
60 C.
1.95
22
L
= 100 mW.
P L (dBm)
f (GHz)
MGR635
MGR637
26
2
80
60
40
20
0
(%)
η C
10
handbook, halfpage
handbook, halfpage
Fig.17 Load impedance as a function of frequency
Pulsed, class-AB operation; < 1 ; 2; t
f = 2 GHz; V
V
CE
Fig.15 Power gain and collector efficiency as a
(dB)
(Ω)
G p
Z L
= 3.6 V; I
30
20
10
16
12
0
8
4
0
1.8
10
(series components); typical values.
CE
function of load power; typical values.
CQ
= 3.6 V; I
= 1 mA; P
1.85
14
CQ
L
= 1 mA; tuned at P
= 100 mW; T
1.9
18
η C
R L
X L
p
= 5 ms.
s
60 C.
Product specification
1.95
22
L
BFG480W
= 100 mW.
G p
P L (dBm)
f (GHz)
MGR638
MGR636
26
2
80
60
40
20
0
(%)
η C