BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 9

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
PACKAGE OUTLINE
1996 Oct 08
Plastic surface-mounted package; 6 leads
Dual NPN wideband transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
5
2
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
9
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
y
A
c
Product specification
X
v
ISSUE DATE
M
04-11-08
06-03-16
BFM520
A
SOT363