BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 5

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
V
Fig.4
CE
(mW)
P tot
Fig.2 Power derating as a function of soldering
h FE
= 6 V.
250
200
150
100
1.5
0.5
50
1
0
0
10
0
DC current gain as a function of collector
current; typical values.
−2
double loaded
single loaded
point temperature; typical values.
10
50
−1
100
1
150
10
I C (mA)
T s (
MBG228
MRA703
o
C)
200
10
2
5
handbook, halfpage
handbook, halfpage
f = 1 GHz; T
Fig.3
I
Fig.5
(GHz)
(pF)
C
C re
= 0; f = 1 MHz.
f T
0.6
0.4
0.2
12
0
8
4
0
10
0
−1
Transition frequency as a function of
collector current; typical values.
Feedback capacitance as a function of
collector-base voltage; typical values.
amb
= 25 C.
4
1
8
10
Product specification
V CB (V)
I C (mA)
V CE = 6V
V CE = 3V
BFM520
MRA704
MRA705
12
10
2