BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 2

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
FEATURES
 Small size
 Temperature and h
 Low noise and high gain
 High gain at low current and low capacitance at low
 Gold metallization ensures excellent reliability.
APPLICATIONS
 Oscillator and buffer amplifiers
 Balanced amplifiers
 LNA/mixers.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
QUICK REFERENCE DATA
1996 Oct 08
Any single transistor
C
f
G
F
R
SYMBOL
T
s
voltage
Dual NPN wideband transistor
re
th j-s
UM
21
2
feedback capacitance
transition frequency
insertion power gain
maximum unilateral power gain
noise figure
thermal resistance from junction
to soldering point
FE
PARAMETER
matched
I
I
I
I
f = 900 MHz; T
f = 900 MHz; T
I
f = 900 MHz; 
single loaded
double loaded
e
C
C
C
C
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 5 mA; V
CB
2
CONDITIONS
= 3 V; f = 1 MHz
CE
PINNING - SOT363A
handbook, halfpage
CE
CE
CE
PIN
S
amb
amb
= 3 V;
1
2
3
4
5
6
Marking code: N2.
= 
= 3 V; f = 900 MHz 
= 3 V;
= 3 V;
= 25 C
= 25 C
opt
Top view
SYMBOL
6
1
Fig.1 Simplified outline and symbol.
b
e
b
e
c
c
1
1
2
2
2
1
2
5
4
3
base 1
emitter 1
collector 2
base 2
emitter 2
collector 1

13




MIN.
b 1
DESCRIPTION
0.4
9
14.5
15
1.2


TYP.
Product specification
e 1
c 1
b 2




1.6
230
115
BFM520
MAX.
MAM210
e 2
c 2
pF
GHz
dB
dB
dB
K/W
K/W
UNIT