BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 6

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
f = 900 MHz; V
Fig.6
I
Fig.8
C
= 5 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
0
8
4
0
10
0
Gain as a function of collector current;
Gain as a function of frequency; typical
typical values.
values.
CE
CE
= 3 V.
= 3 V.
MSG/G max
10
10
2
G UM
MSG/G max
G UM
10
20
3
I C (mA)
f (MHz)
MGG203
MGG205
10
30
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
Fig.7
I
Fig.9
C
= 20 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
8
4
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
CE
CE
MSG/G max
= 3 V.
= 3 V.
MSG/G max
10
10
G UM
2
G UM
10
20
Product specification
3
I C (mA)
f (MHz)
BFM520
MGG204
MGG206
10
30
4