BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 7

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
1996 Oct 08
handbook, halfpage
Dual NPN wideband transistor
V
Fig.10 Minimum noise figure and associated
CE
F min
(dB)
= 3 V.
5
4
3
2
1
0
1
2000 MHz
1000 MHz
available gain as functions of collector
current.
900 MHz
500 MHz
F min
10
G ass
I C (mA)
f = 900 MHz
1000 MHz
2000 MHz
MRA714
10
−5
20
15
10
0
5
2
G ass
(dB)
7
handbook, halfpage
V
Fig.11 Minimum noise figure and associated
CE
F min
(dB)
= 3 V.
5
4
3
2
1
0
10
20 mA
2
available gain as functions of frequency.
5 mA
I C = 5 mA
F min
20 mA
10
G ass
3
Product specification
f (MHz)
BFM520
MRA715
10
−5
15
20
10
0
G ass
5
4
(dB)