BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 8

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
APPLICATION INFORMATION
SPICE parameters for any single BFM520 die
Note
1. These parameters have not been extracted,
1996 Oct 08
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SEQUENCE No.
Dual NPN wideband transistor
(1)
(1)
(1)
(1)
(1)
(1)
the default values are shown.
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
PARAMETER VALUE
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
0.775
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
fA


V
mA
fA



V
mA
aA


A




eV

pF
mV

ps

V
mA
deg
fF
mV


ps
F
mV


UNIT
8
handbook, halfpage
Fig.12 Package equivalent circuit SOT363A
Fig.13 Package capacitance (fF) between
B1
(inductance only).
indicated nodes.
C2
C1
E2
E1
B2
LB
Lead inductances (nH)
B1
27
48
3
1
3
LB
LE
LP
LP
LE
C1
E1
27
17
36
E2
6
T1
0.4
0.6
1.0
36
17
E1
3
T2
C2
E2
LP
LE
48
B2
3
Product specification
LB
C2
6
BFM520
MBG188
MBG189
B2