BFM520,115 NXP Semiconductors, BFM520,115 Datasheet - Page 4

• Manufacturer Part Number: BFM520,115
• Description: TRANS NPN DUAL 70MA 8V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BFM520,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1646-2; 934041410115; BFM520 T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. G
1996 Oct 08
DC characteristics of any single transistor
V
V
V
I
h
DC characteristics of the dual transistor
h
V
AC characteristics of any single transistor
f
C
C
G
F
SYMBOL
j
CBO
T
s
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
Dual NPN wideband transistor
c
re
UM
21
FE
BEO
2
UM
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-base leakage current
DC current gain
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
transition frequency
collector capacitance
feedback capacitance
maximum unilateral power gain;
note 1
insertion power gain
noise figure
PARAMETER
I
I
V
I
I
V
I
I
I
I
I
T
I
T
I
f = 900 MHz; T
I
f = 900 MHz; 
I
f = 900 MHz; 
I
f = 2 GHz; 
C
C
E
C
C1
E1
C
E
C
C
C
C
C
C
C
amb
amb
CB
CE1
= 2.5 A; I
= i
= 2.5 A; I
= 10 A; I
= 20 mA; V
= 20 mA; V
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 5 mA; V
= 20 mA; V
= 5 mA; V
= I
= I
= 6 V; I
e
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= V
E2
C2
= 0; V
CB
= 30 mA; T
4
= 20 mA;
CE2
12
CONDITIONS
= 3 V; f = 1 MHz
is zero.
E
B
S
CB
CE
CE
E
C
= 6 V
= 0
CE
CE
CE
CE
CE
CE
= 0
= 
= 0
= 0
amb
S
S
= 3 V; f = 1 MHz
= 3 V;
= 3 V;
= 6 V
= 3 V; f = 1 GHz
= 3 V;
= 3 V;
= 3 V;
= 
= 3 V;
= 
opt
= 25 C
amb
opt
opt
G
UM
= 25 C
=
10
log
20
8
2.5

60
1
0





13



-------------------------------------------------------- dB

MIN.
1
–
s
11




120
1.2
1
9
0.5
0.4
15
9
14.5
1.2
1.7
1.9
s
2
TYP.
21
 1

Product specification
2
–
s



50
250








1.6
2.1

22
MAX.
BFM520
2

V
V
V
nA
mV
GHz
pF
pF
dB
dB
dB
dB
dB
dB
UNIT