BFR92AW,135 NXP Semiconductors, BFR92AW,135 Datasheet - Page 8

• Manufacturer Part Number: BFR92AW,135
• Description: TRANS NPN 25MA 15V 5GHZ UMT3
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW,135

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 65
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022940135; BFR92AW /T3; BFR92AW /T3

NXP Semiconductors
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handbook, full pagewidth
NPN 5 GHz wideband transistor
(1)
(2) F = 2.5 dB.
(3) F = 3 dB.
(4) F = 4 dB.
(5)
(6) G = 15 dB.
(7) G = 14 dB.
(8) G = 13 dB.
f = 1 GHz; V
(1)
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5)
(6) G = 8 dB.
(7) G = 7 dB.
(8) G = 6 dB.
f = 2 GHz; V
opt
ms
opt
ms
; G
; G
; F
; F
min
min
max
max
CE
CE
= 2.1 dB.
= 3 dB.
= 15.7 dB.
= 9.1 dB.
= 10 V; I
= 10 V; I
C
C
= 5 mA; Z
= 5 mA; Z
o
o
180
Fig.13 Common emitter noise figure circles; typical values.
Fig.14 Common emitter noise figure circles; typical values.
= 50
= 50
o
180
o
0
135
135
0.2
0.2
0
(5)
o
135
o
135
0.2
0.2
(6)
0.2
o
o
(7)
0.2
0.5
0.5
(8)
Rev. 03 - 12 March 2008
(5)
0.5
0.5
(6)
0.5
(7)
0.5
(8)
90
90
1
(1)
1
1
o
o
90
(2)
90
1
1
1
(3)
o
o
(1)
(4)
2
(2)
2
(3)
2
2
(4)
5
2
2
45
45
5
o
o
5
5
45
45
MGC892
o
o
5
5
MGC893
0
o
0
o
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFR92AW
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