BFR92AW,135 NXP Semiconductors, BFR92AW,135 Datasheet - Page 3

• Manufacturer Part Number: BFR92AW,135
• Description: TRANS NPN 25MA 15V 5GHZ UMT3
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW,135

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 65
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022940135; BFR92AW /T3; BFR92AW /T3

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. T
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 5 GHz wideband transistor
(mW)
P tot
s
400
300
200
100
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
Fig.2 Power derating curve
50
PARAMETER
PARAMETER
100
150
T
s
MLB540
( C)
o
200
Rev. 03 - 12 March 2008
open emitter
open base
open collector
up to T
up to T
s
s
= 93 C; see Fig.2; note 1
= 93 C; note 1
CONDITIONS
CONDITIONS
MIN.
65
VALUE
Product specification
190
BFR92AW
20
15
2
25
300
+150
150
MAX.
3 of 13
UNIT
K/W
V
V
V
mA
mW
UNIT
C
C