BFR92AW,135 NXP Semiconductors, BFR92AW,135 Datasheet - Page 2

• Manufacturer Part Number: BFR92AW,135
• Description: TRANS NPN 25MA 15V 5GHZ UMT3
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW,135

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 65
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022940135; BFR92AW /T3; BFR92AW /T3

NXP Semiconductors
FEATURES
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
QUICK REFERENCE DATA
Note
1. T
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
j
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
CBO
CEO
tot
re
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
PINNING
open emitter
open base
up to T
I
I
T
I
I
T
I
T
I
C
C
C
C
C
C
amb
amb
amb
s
PIN
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
=
1
2
3
= 25 C
= 25 C
= 25 C
opt
s
Rev. 03 - 12 March 2008
= 93 C; note 1
CE
base
emitter
collector
= 10 V; f = 1 MHz;
CONDITIONS
CE
CE
CE
CE
CE
DESCRIPTION
= 10 V; f = 1 GHz;
= 10 V
= 10 V; f = 500 MHz
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
handbook, 2 columns
65
3.5
MIN.
Marking code: P2.
Top view
90
0.35
5
14
8
2
Fig.1 SOT323
TYP.
Product specification
1
BFR92AW
20
15
25
300
135
150
MAX.
3
MBC870
2 of 13
2
V
V
mA
mW
pF
GHz
dB
dB
dB
C
UNIT