BFR92AW,115 NXP Semiconductors, BFR92AW,115 Datasheet

TRANS NPN 15V 5GHZ SOT323

BFR92AW,115

Manufacturer Part Number
BFR92AW,115
Description
TRANS NPN 15V 5GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR92AW,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
65 @ 15mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2V
Collector Current (dc) (max)
25mA
Dc Current Gain (min)
65
Frequency (max)
5GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1989-2
934022940115
BFR92AW T/R
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BFR92AW
NPN 5 GHz wideband transistor
Rev. 03 — 12 March 2008
IMPORTANT NOTICE
Product data sheet

Related parts for BFR92AW,115

BFR92AW,115 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors NPN 5 GHz wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies GHz. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage ...

Page 3

... NXP Semiconductors NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j THERMAL CHARACTERISTICS SYMBOL ...

Page 4

... NXP Semiconductors NPN 5 GHz wideband transistor CHARACTERISTICS (unless otherwise specified). j SYMBOL PARAMETER I collector leakage current CBO h DC current gain FE C collector capacitance c C emitter capacitance e C feedback capacitance re f transition frequency T G maximum unilateral power UM gain; note 1 F noise figure Note 1 ...

Page 5

... NXP Semiconductors NPN 5 GHz wideband transistor 120 handbook, halfpage Fig.3 DC current gain as a function of collector current; typical values. 6 handbook, halfpage f T (GHz 500 MHz amb Fig.5 Transition frequency as a function of collector current; typical values. MCD074 C re (pF (mA MHz. C Fig.4 MGC884 2 10 ...

Page 6

... NXP Semiconductors NPN 5 GHz wideband transistor 30 handbook, halfpage gain (dB 500 MHz. CE Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage gain (dB MSG mA Fig.8 Gain as a function of frequency; typical values. MGC885 handbook, halfpage gain (dB) MSG (mA MGC887 handbook, halfpage gain (dB) G max ...

Page 7

... NXP Semiconductors NPN 5 GHz wideband transistor 6 handbook, halfpage F (dB Fig.10 Minimum noise figure as a function of collector current; typical values. handbook, full pagewidth o 180 f = 500 MHz mA Fig.12 Common emitter noise figure circles; typical values. MGC889 handbook, halfpage GHz 1 GHz 500 MHz 2 10 ...

Page 8

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth 180 ( 2.1 dB. opt min ( 2.5 dB. ( dB. ( dB. ( 15.7 dB. ms max ( dB. ( dB GHz mA Fig.13 Common emitter noise figure circles; typical values. handbook, full pagewidth ( dB. opt min ( 3.5 dB. ( dB. ( dB. ( 9.1 dB. ms max ( dB. ( dB GHz mA Fig.14 Common emitter noise figure circles; typical values. ...

Page 9

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth o 180 mA Fig.15 Common emitter input reflection coefficient (s handbook, full pagewidth o 180 mA Fig.16 Common emitter forward transmission coefficient ( 135 0.5 0.2 3 GHz 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 o 90 Rev March 2008 Product specifi ...

Page 10

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth o 180 0. mA Fig.17 Common emitter reverse transmission coefficient (s handbook, full pagewidth o 180 mA Fig.18 Common emitter output reflection coefficient ( GHz o 135 40 MHz 0.20 0.15 0.10 0.05 o 135 135 0.5 0.2 0.2 0 GHz 0.2 ...

Page 11

... NXP Semiconductors NPN 5 GHz wideband transistor PACKAGE OUTLINE handbook, full pagewidth 1 0.65 Dimensions in mm. 2.2 A 1.8 0.25 0.10 3 1.0 0.8 0.40 2 0.30 0 1.3 Fig.19 SOT323. Rev March 2008 Product specification 1.35 B 1.15 X 2.2 0 2.0 0.2 1.1 max 0.1 0.0 0.3 ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors Revision history Revision history Document ID Release date BFR92AW_N_3 20080312 • Modifications: Quick reference data and Characteristics Table; DC current gain value changed BFR92AW_2 19950918 BFR92AW_1 19921001 Data sheet status Change notice Product data sheet - Product specification - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘ ...

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