BFR92AW,135 NXP Semiconductors, BFR92AW,135 Datasheet - Page 7

• Manufacturer Part Number: BFR92AW,135
• Description: TRANS NPN 25MA 15V 5GHZ UMT3
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW,135

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 65
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022940135; BFR92AW /T3; BFR92AW /T3

NXP Semiconductors
handbook, full pagewidth
handbook, halfpage
NPN 5 GHz wideband transistor
V
f = 500 MHz; V
CE
(dB)
Fig.10 Minimum noise figure as a function of
= 10 V.
F
6
4
0
2
1
collector current; typical values.
CE
= 10 V; I
C
= 5 mA; Z
180
10
Fig.12 Common emitter noise figure circles; typical values.
o
o
= 50 .
f = 2 GHz
0
1 GHz
500 MHz
I
C
135
135
0.2
0.2
(mA)
o
o
0.2
MGC889
0.5
0.5
10
Rev. 03 - 12 March 2008
2
0.5
90
90
1
1
1
o
o
handbook, halfpage
V
F = 4 dB
F
F = 3 dB
CE
min
(dB)
Fig.11 Minimum noise figure as a function of
= 10 V.
F = 2 dB
2
F
10
= 1.6 dB
6
4
0
2
2
opt
2
2
frequency; typical values.
5
45
45
o
o
5
5
MGC891
0
o
10
3
1.0
0.8
0.6
0.4
0.2
0
1.0
I C = 15 mA
10 mA
5 mA
f (MHz)
Product specification
BFR92AW
MGC890
10
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