BFR92AW,135 NXP Semiconductors, BFR92AW,135 Datasheet - Page 6

• Manufacturer Part Number: BFR92AW,135
• Description: TRANS NPN 25MA 15V 5GHZ UMT3
• Manufacturer: NXP Semiconductors

Specifications of BFR92AW,135

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 65
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934022940135; BFR92AW /T3; BFR92AW /T3

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
V
V
gain
(dB)
CE
CE
gain
(dB)
Fig.6
= 10 V; f = 500 MHz.
= 10 V; I
30
20
10
50
40
30
20
10
0
0
Fig.8
10
0
C
Gain as a function of collector current;
typical values.
G UM
MSG
= 5 mA.
Gain as a function of frequency;
typical values.
5
10
2
10
10
3
15
MSG
G UM
f (MHz)
I
C
G max
(mA)
MGC885
MGC887
10
20
Rev. 03 - 12 March 2008
4
handbook, halfpage
handbook, halfpage
V
V
gain
(dB)
CE
CE
gain
(dB)
Fig.7
= 10 V; f = 1 GHz.
= 10 V; I
30
20
10
50
40
30
20
10
0
0
Fig.9
10
0
C
G
Gain as a function of collector current;
typical values.
MSG
= 15 mA.
UM
Gain as a function of frequency;
typical values.
5
10
2
10
10
3
Product specification
15
BFR92AW
G UM
f (MHz)
MSG
I
C
G max
(mA)
MGC886
MGC888
6 of 13
10
20
4