BFR92A,215 NXP Semiconductors, BFR92A,215 Datasheet
BFR92A,215
Specifications of BFR92A,215
933551560215
BFR92A T/R
Related parts for BFR92A,215
BFR92A,215 Summary of contents
Page 1
... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
Page 2
... NXP Semiconductors NPN 5 GHz wideband transistor FEATURES High power gain Low noise figure Low intermodulation distortion. APPLICATIONS RF wideband amplifiers and oscillators. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO I collector current (DC total power dissipation tot C feedback capacitance re f transition frequency ...
Page 3
... NXP Semiconductors NPN 5 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to soldering point T th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector leakage current CBO h DC current gain ...
Page 4
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth choke turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm. Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.3 Power derating curve. ...
Page 5
... NXP Semiconductors NPN 5 GHz wideband transistor 1 handbook, halfpage C c (pF) 0.8 0.6 0.4 0 MHz Fig.5 Collector capacitance as a function of collector-base voltage; typical values. 30 handbook, halfpage gain (dB 500 MHz. CE MSG = maximum stable gain maximum unilateral power gain. UM Fig.7 Gain as a function of collector current; ...
Page 6
... NXP Semiconductors NPN 5 GHz wideband transistor 50 handbook, halfpage gain (dB MSG mA maximum unilateral power gain; MSG = maximum stable gain maximum available gain. max Fig.9 Gain as a function of frequency; typical values. 40 handbook, halfpage B S (mS) 20 2.5 0 2.0 1 800 MHz Fig.11 Circles of constant noise figure; ...
Page 7
... NXP Semiconductors NPN 5 GHz wideband transistor 4 handbook, halfpage F (dB Fig.13 Minimum noise figure as a function of collector current; typical values. 45 handbook, halfpage d im (dB 150 mV (43.5 dBmV 793.25 MHz amb Measured in MATV test circuit (see Fig.2). Fig.15 Intermodulation distortion; typical values. MCD081 handbook, halfpage ...
Page 8
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth mA amb Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180 150 mA amb Fig.18 Common emitter forward transmission coefficient (S 1 0.5 0.2 1200 0.2 0.5 1 1000 800 500 200 0.2 100 MHz ...
Page 9
... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth 180 mA amb Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth amb Fig.20 Common emitter output reflection coefficient (S 90 120 1200 MHz typ 150 1000 800 500 200 100 150 120 ...
Page 10
... NXP Semiconductors NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...
Page 11
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 12
... NXP Semiconductors Revision history Revision history Document ID Release date BFR92A_N_4 20090302 • Modifications: Fig.1 on page 2; Figure note changed BFR92A_N_3 20080307 BFR92A_2 19971029 (9397 750 02766) BFR92A_1 19950901 Data sheet status Change notice Product data sheet - Product data sheet - Product specification ...