BFS17,215 NXP Semiconductors, BFS17,215 Datasheet - Page 4

• Manufacturer Part Number: BFS17,215
• Description: TRANS NPN 25MA 15V 1GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 1600 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 25
• Frequency (max): 1.6GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1652-2; 933082771215; BFS17 T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
V
V
(GHz)
CE
CE
h FE
f T
Fig.4
100
= 1 V; T
= 5 V; f = 500 MHz; T
50
0
2
1
0
Fig.2
0
0
j
= 25 C.
Transition frequency as a function of
collector current.
DC current gain as a function of
collector current.
10
10
j
= 25 C.
20
20
I C (mA)
I C (mA)
MEA393
MEA395
30
30
4
handbook, halfpage
handbook, halfpage
I
V
E
CE
C c
(pF)
= i
(dB)
Fig.3
Fig.5
2.0
1.6
1.2
0.8
0.4
F
= 5 V; R
e
10
0
5
0
= 0; f = 1 MHz; T
0
0
S
Collector capacitance as a function of
collector-base voltage.
Minimum noise figure as a function of
collector current.
= 50 ; f = 500 MHz; T
4
j
10
= 25 C.
8
j
12
= 25 C.
20
Product specification
V CB (V)
16
I C (mA)
MEA396
MEA397
BFS17
20
30