BFS17,215 NXP Semiconductors, BFS17,215 Datasheet - Page 2

• Manufacturer Part Number: BFS17,215
• Description: TRANS NPN 25MA 15V 1GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (db Typ @ F): 4.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 1600 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 25
• Frequency (max): 1.6GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1652-2; 933082771215; BFS17 T/R

NXP Semiconductors
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
 A wide range of RF applications such as:
PINNING
QUICK REFERENCED DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. T
September 1995
V
V
I
P
f
F
V
V
V
I
I
P
T
T
SYMBOL
SYMBOL
C
T
C
CM
– Mixers and oscillators in TV tuners
– RF communications equipment.
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 1 GHz wideband transistor
PIN
1
2
3
s
is the temperature at the soldering point of the collector pin.
base
emitter
collector
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
open emitter
open base
up to T
I
I
T
C
C
j
= 25 mA; V
= 2 mA; V
= 25 C
s
= 70 C; note 1
open emitter
open base
open collector
up to T
CE
CE
= 5 V; R
= 5 V; f = 500 MHz; T
2
CONDITIONS
s
handbook, halfpage
= 70 C; note 1
Marking code: E1p.
CONDITIONS
S
= 50 ; f = 500 MHz;
j
= 25 C
Top view
1
Fig.1 SOT23.
3




1
4.5






65

MSB003
TYP.
MIN.
Product specification
2
25
15
25
300


25
15
2.5
25
50
300
+150
150
MAX.
MAX.
BFS17
V
V
mA
mW
GHz
dB
V
V
V
mA
mA
mW
C
C
UNIT
UNIT