BFS17,235 NXP Semiconductors, BFS17,235 Datasheet

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BFS17,235

Manufacturer Part Number
BFS17,235
Description
TRANS NPN 15V 25MA 1GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFS17,235

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17
NPN 1 GHz wideband transistor
Product specification
September 1995

Related parts for BFS17,235

BFS17,235 Summary of contents

Page 1

DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...

Page 2

... NXP Semiconductors NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 package. APPLICATIONS  A wide range of RF applications such as: – Mixers and oscillators in TV tuners – RF communications equipment. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector QUICK REFERENCED DATA SYMBOL PARAMETER V collector-base voltage ...

Page 3

... NXP Semiconductors NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j-s Note the temperature at the soldering point of the collector pin. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE f transition frequency ...

Page 4

... NXP Semiconductors NPN 1 GHz wideband transistor 100 handbook, halfpage  Fig.2 DC current gain as a function of collector current. 2 handbook, halfpage f T (GHz  500 MHz Fig.4 Transition frequency as a function of collector current. September 1995 MEA395 handbook, halfpage (mA MEA393 handbook, halfpage (mA 2 (pF) 1 ...

Page 5

... NXP Semiconductors NPN 1 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 September 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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